Vishay_SI7742DP-T1-GE3
original

Vishay
SI7742DP-T1-GE3

278-SI7742DP-T1-GE3
PDF Datasheet
30V 29A N-CH MOSFET SOIC 3.5mR RdsOn
16 weeks

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
29A
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
5.3nF
Show More

SI7742DP-T1-GE3 Description

30V 29A N-CH MOSFET SOIC 3.5mR RdsOn

FAQ

What voltage specification is listed for SI7742DP-T1-GE3?
The listed voltage-related specification for SI7742DP-T1-GE3 is 30V.
What is the standard lead time for SI7742DP-T1-GE3?
What operating temperature range does SI7742DP-T1-GE3 support?
What is SI7742DP-T1-GE3?
Are there related or alternative parts for SI7742DP-T1-GE3?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ