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SI7858ADP-T1-E3
278-SI7858ADP-T1-E3
PDF Datasheet
N-Channel Power MOSFET, 12V, 20A, 2.6mR RdsOn
17 weeks
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Tech Specifications
Continuous Drain Current (ID)
20A
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
12V
Drain-source On Resistance-Max
2.6mR
Fall Time
70ns
Gate to Source Voltage (Vgs)
8V
Height
1.04mm
Input Capacitance
5.7nF
SI7858ADP-T1-E3 Description
N-Channel Power MOSFET, 12V, 20A, 2.6mR RdsOn
FAQ
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