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SI7858ADP-T1-GE3
278-SI7858ADP-T1-GE3
PDF Datasheet
12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8
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Tech Specifications
Continuous Drain Current (ID)
20A
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
12V
Fall Time
40ns
Gate to Source Voltage (Vgs)
8V
Height
1.04mm
Input Capacitance
5.7nF
Length
4.9mm
SI7858ADP-T1-GE3 Description
12V 20A N-CH MOSFET, 2.6mR Rds On, PPAK SO-8
FAQ
What operating temperature range does SI7858ADP-T1-GE3 support?
SI7858ADP-T1-GE3 has an operating temperature range of 150°C.
Is SI7858ADP-T1-GE3 currently in stock?
What package or case is SI7858ADP-T1-GE3 available in?
What is the mounting type of SI7858ADP-T1-GE3?
Are there related or alternative parts for SI7858ADP-T1-GE3?
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