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Continuous Drain Current (ID)
6.1A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
SI7964DP-T1-GE3 Description
MOSFET 2N-CH 60V 6.1A PPAK SO-8
FAQ
What voltage specification is listed for SI7964DP-T1-GE3?
The listed voltage-related specification for SI7964DP-T1-GE3 is 60V.
What is SI7964DP-T1-GE3?
Is SI7964DP-T1-GE3 currently in stock?
Are there related or alternative parts for SI7964DP-T1-GE3?
What operating temperature range does SI7964DP-T1-GE3 support?



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