Vishay_SI7964DP-T1-GE3
original

Vishay
SI7964DP-T1-GE3

278-SI7964DP-T1-GE3
PDF Datasheet
MOSFET 2N-CH 60V 6.1A PPAK SO-8

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

Continuous Drain Current (ID)
6.1A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Show More

SI7964DP-T1-GE3 Description

MOSFET 2N-CH 60V 6.1A PPAK SO-8

FAQ

What is SI7964DP-T1-GE3?
SI7964DP-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is SI7964DP-T1-GE3 available in?
What is the mounting type of SI7964DP-T1-GE3?
Are there related or alternative parts for SI7964DP-T1-GE3?
Is SI7964DP-T1-GE3 currently in stock?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ