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Tech Specifications
Continuous Drain Current (ID)
6.1A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
60V
Fall Time
15ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
SI7964DP-T1-GE3 Description
MOSFET 2N-CH 60V 6.1A PPAK SO-8
FAQ
What is SI7964DP-T1-GE3?
SI7964DP-T1-GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is SI7964DP-T1-GE3 available in?
What is the mounting type of SI7964DP-T1-GE3?
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