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Vishay
SI8851EDB-T2-E1
278-SI8851EDB-T2-E1
PDF Datasheet
VISHAY SI8851EDB-T2-E1 MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT
20 weeks
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Tech Specifications
Continuous Drain Current (ID)
16.7A
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
20V
Fall Time
35ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
6.9nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SI8851EDB-T2-E1 Description
VISHAY SI8851EDB-T2-E1 MOSFET, P CHANNEL, -20V, -16.7A, MICRO FOOT
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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