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SIA477EDJ-T1-GE3
278-SIA477EDJ-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 12A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
18 weeks
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Tech Specifications
Continuous Drain Current (ID)
12A
Drain to Source Voltage (Vdss)
12V
Gate to Source Voltage (Vgs)
8V
Input Capacitance
2.97nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
19W
Mount
Surface Mount
SIA477EDJ-T1-GE3 Description
Power Field-Effect Transistor, 12A I(D), 12V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
FAQ
What is the standard lead time for SIA477EDJ-T1-GE3?
The standard lead time for SIA477EDJ-T1-GE3 is 18 weeks.
What operating temperature range does SIA477EDJ-T1-GE3 support?
Is SIA477EDJ-T1-GE3 currently in stock?
What is SIA477EDJ-T1-GE3?
What is the mounting type of SIA477EDJ-T1-GE3?
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