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SIB912DK-T1-GE3
278-SIB912DK-T1-GE3
PDF Datasheet
20V 1.5A N-CH MOSFET, 180mR Rds On, Dual Channel, SM
13 weeks
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Tech Specifications
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
Input Capacitance
95pF
SIB912DK-T1-GE3 Description
20V 1.5A N-CH MOSFET, 180mR Rds On, Dual Channel, SM
FAQ
Is SIB912DK-T1-GE3 currently in stock?
Yes. SIB912DK-T1-GE3 currently shows 6000 unit(s) in stock.
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