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Tech Specifications
Continuous Drain Current (ID)
4.1A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
200V
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.2nF
Max Operating Temperature
150°C
SIE836DF-T1-E3 Description
Mosfet N-ch 200V 18.3A Polarpak
FAQ
What is SIE836DF-T1-E3?
SIE836DF-T1-E3 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the mounting type of SIE836DF-T1-E3?
What voltage specification is listed for SIE836DF-T1-E3?
Is SIE836DF-T1-E3 currently in stock?
What operating temperature range does SIE836DF-T1-E3 support?
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