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SIHA22N60E-E3
278-SIHA22N60E-E3
PDF Datasheet
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
18 weeks
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
21A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
600V
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.92nF
Lead Free
Lead Free
SIHA22N60E-E3 Description
Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAQ
What voltage specification is listed for SIHA22N60E-E3?
The listed voltage-related specification for SIHA22N60E-E3 is 600V.
Are there related or alternative parts for SIHA22N60E-E3?
What is the mounting type of SIHA22N60E-E3?
What package or case is SIHA22N60E-E3 available in?
Is SIHA22N60E-E3 currently in stock?
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