German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SIHB11N80E-GE3
2088-SIHB11N80E-GE3
PDF Datasheet
Power Field-Effect Transistor,
21 Weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Max Operating Temperature
150
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
RoHS
Yes
Eccn Code
EAR99
SIHB11N80E-GE3 Description
Power Field-Effect Transistor,
FAQ
What package or case is SIHB11N80E-GE3 available in?
SIHB11N80E-GE3 is available in the TO-263AB package / case.
What is the standard lead time for SIHB11N80E-GE3?
Is SIHB11N80E-GE3 currently in stock?
What operating temperature range does SIHB11N80E-GE3 support?
What is SIHB11N80E-GE3?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
