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SIHB33N60ET1-GE3
278-SIHB33N60ET1-GE3
PDF Datasheet
600V 33A 99m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
21 weeks
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Tech Specifications
Continuous Drain Current (ID)
33A
Drain to Source Resistance
98mR
Drain to Source Voltage (Vdss)
600V
Max Power Dissipation
278W
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
SIHB33N60ET1-GE3 Description
600V 33A 99m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
FAQ
Is SIHB33N60ET1-GE3 currently in stock?
Yes. SIHB33N60ET1-GE3 currently shows 1976 unit(s) in stock.
What is SIHB33N60ET1-GE3?
What voltage specification is listed for SIHB33N60ET1-GE3?
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