Vishay_SIHD6N80E-GE3
original

Vishay
SIHD6N80E-GE3

278-SIHD6N80E-GE3
PDF Datasheet
Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA
18 weeks

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Tech Specifications

Typical Input Capacitance @ Vds (pF)
827@100V
Category
Power MOSFET
Configuration
Single
PCB changed
2
Typical Turn-Off Delay Time (ns)
27
HTS
8541.29.00.95
Maximum Gate Source Leakage Current (nA)
1000
Number of Elements per Chip
1
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SIHD6N80E-GE3 Description

Bulk provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIHD6N80E-GE3 belongs to can be classified under the Discrete Semiconductors. SIHD6N80E-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIHD6N80E-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is the standard lead time for SIHD6N80E-GE3?
The standard lead time for SIHD6N80E-GE3 is 18 weeks.
What operating temperature range does SIHD6N80E-GE3 support?
What is the mounting type of SIHD6N80E-GE3?
Is SIHD6N80E-GE3 currently in stock?
Are there related or alternative parts for SIHD6N80E-GE3?
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