

Vishay
SIHG23N60E-GE3
2088-SIHG23N60E-GE3
PDF Datasheet
MOSFET 650V 158mOhms@10V 23A N-Channel
21 Weeks
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Responsible qualityTech Specifications
Package/Case
TO-247-3
Continuous Drain Current (ID)
23A
Drain to Source Resistance
158mR
Drain to Source Voltage (Vdss)
600V
Max Power Dissipation
227W
Number of Channels
1
Package Quantity
500
Packaging
Rail/Tube
SIHG23N60E-GE3 Description
MOSFET 650V 158mOhms@10V 23A N-Channel
FAQ
What is SIHG23N60E-GE3?
SIHG23N60E-GE3 is a FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What voltage specification is listed for SIHG23N60E-GE3?
What package or case is SIHG23N60E-GE3 available in?
Are there related or alternative parts for SIHG23N60E-GE3?
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