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SIHP22N60E-GE3
278-SIHP22N60E-GE3
PDF Datasheet
600V N-CH MOSFET, 21A, 180mR, TO-220
18 weeks
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
21A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
180mR
Fall Time
54ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
SIHP22N60E-GE3 Description
600V N-CH MOSFET, 21A, 180mR, TO-220
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