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SIJ482DP-T1-GE3
278-SIJ482DP-T1-GE3
PDF Datasheet
80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor
27 weeks
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Tech Specifications
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
6.2mR
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
9.5MR
Gate to Source Voltage (Vgs)
20V
Height
1.14mm
Input Capacitance
2.425nF
SIJ482DP-T1-GE3 Description
80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor
FAQ
What is the standard lead time for SIJ482DP-T1-GE3?
The standard lead time for SIJ482DP-T1-GE3 is 27 weeks.
What voltage specification is listed for SIJ482DP-T1-GE3?
What operating temperature range does SIJ482DP-T1-GE3 support?
What package or case is SIJ482DP-T1-GE3 available in?
What is SIJ482DP-T1-GE3?
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