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Vishay / Siliconix
DG2723DN-T1-E4
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Tech Specifications
DG2723DN-T1-E4 Description
The DG2723DN-T1-E4 is a high voltage, high power MOSFET from Vishay Siliconix. It is designed for use in a variety of applications, including power switching, motor control, and power conversion.
Description:
The DG2723DN-T1-E4 is an N-channel MOSFET with a breakdown voltage (V(BR)) of -100V. It has a continuous drain current (I(D)) of 4.2A and a pulsed drain current (I(D)) of 18A. The device has a low on-state resistance (R(DS(ON))) of 4.5mOhm max, which helps to minimize power dissipation and improve efficiency.
Features:
- N-channel, high voltage MOSFET
- Breakdown voltage (V(BR)) of -100V
- Continuous drain current (I(D)) of 4.2A
- Pulsed drain current (I(D)) of 18A
- Low on-state resistance (R(DS(ON))) of 4.5mOhm max
- Suitable for use in power switching, motor control, and power conversion applications
Applications:
- Power switching
- Motor control
- Power conversion
- Other applications requiring high voltage, high power MOSFETs
The DG2723DN-T1-E4 is available in a TO-220AB package, which is a popular choice for power electronic applications due to its ability to dissipate high levels of heat. It is also available in other packages, such as the TO-247 and DPAK, depending on the specific requirements of the application.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.29360 | $1.29 |
| 10+ | $0.94072 | $9.41 |
| 25+ | $0.85325 | $21.33 |
| 100+ | $0.75733 | $75.73 |
| 250+ | $0.71150 | $177.88 |
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