


Vishay / Siliconix
DG406DW-E3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
DG406DW-E3 Description
The DG406DW-E3 is a high-power MOSFET transistor from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including power supplies, motor drives, and automotive systems.
Description:
The DG406DW-E3 is an N-channel MOSFET with a drain-source voltage (VDS) of 100V, a continuous drain current (ID) of 40A, and a pulsed drain current (IDSM) of 260A. It has a low on-state resistance (RDS(on)) of 4.5mΩ max, which helps to minimize power dissipation and improve efficiency.
Features:
- High power and efficient operation
- Low on-state resistance (RDS(on))
- High drain-source voltage (VDS)
- High continuous and pulsed drain current ratings
- Suitable for use in a wide range of power electronic applications
Applications:
- Power supplies
- Motor drives
- Automotive systems
- Industrial control systems
- Renewable energy systems
- Battery management systems
Overall, the DG406DW-E3 is a high-power MOSFET transistor that offers efficient operation, high current ratings, and a low on-state resistance. It is suitable for use in a variety of power electronic applications where high power and efficiency are required.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.15440 | $7.15 |
| 10+ | $5.54048 | $55.40 |
| 25+ | $5.13744 | $128.44 |
| 100+ | $4.69480 | $469.48 |
| 250+ | $4.48385 | $1120.96 |



.png)












.png?x-oss-process=image/format,webp/resize,h_32)










