Vishay / Siliconix_IRFBE30PBF
original

Vishay / Siliconix
IRFBE30PBF

278-IRFBE30PBF
PDF Datasheet
MOSFET N-CH 800V 4.1A TO220AB
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-220AB
Drain to Source Voltage (Vdss)
800 V
Power Dissipation (Max)
125W (Tc)
Package / Case
TO-220-3
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IRFBE30PBF Description

The IRFBE30PBF is a high-power N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of power electronic applications, including power switching, motor control, and power management.

Description:

The IRFBE30PBF is a high-power MOSFET transistor that features a high input impedance and low output impedance. It has a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 4.2A. The device also has a low on-state resistance (Rds(on)) of 4.5 mΩ, which helps to minimize power dissipation and improve efficiency.

Features:

  • N-channel, high-power MOSFET transistor
  • Maximum drain-source voltage (Vds) of 30V
  • Continuous drain current (Id) of 4.2A
  • Low on-state resistance (Rds(on)) of 4.5 mΩ
  • High input impedance and low output impedance
  • Suitable for use in a variety of power electronic applications

Applications:

The IRFBE30PBF is commonly used in power electronic applications that require high power switching and efficient power management. Some of the common applications for this device include:

  1. Power switching: The IRFBE30PBF can be used in power switching applications, such as DC-DC converters and Class D audio amplifiers, where high efficiency and low power dissipation are required.
  2. Motor control: The device can be used in motor control applications, such as brushless DC motor drivers and stepper motor drivers, where high power and fast switching are required.
  3. Power management: The IRFBE30PBF can be used in power management applications, such as battery chargers and power supplies, where high efficiency and low power dissipation are important.
  4. LED lighting: The device can be used in LED lighting applications, such as streetlights and automotive headlights, where high power and fast switching are required.

Overall, the IRFBE30PBF is a high-power MOSFET transistor that is designed for use in a variety of power electronic applications. Its low on-state resistance and high input impedance make it an ideal choice for applications that require high efficiency and low power dissipation.

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