Vishay / Siliconix Tariff Inquiry

SI3585CDV-T1-GE3

The SI3585CDV-T1-GE3 is a high voltage, high-speed N-channel MOSFET from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power management, and power conversion.

Description:

The SI3585CDV-T1-GE3 is a surface-mount MOSFET with a drain-to-source voltage (Vds) of -30V and a continuous drain current (Id) of 4.2A. It has a low on-state resistance (Rds(on)) of 35mΩ max, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 14nC and a gate-source threshold voltage (Vgs(th)) of -2.5V min.

Features:

• High voltage, high-speed N-channel MOSFET
• Surface-mount package
• Low on-state resistance (Rds(on)) of 35mΩ max
• High drain-to-source voltage (Vds) of -30V
• Continuous drain current (Id) of 4.2A
• Fast switching speed with a typical gate charge (Qg) of 14nC
• Low gate-source threshold voltage (Vgs(th)) of -2.5V min

Applications:

The SI3585CDV-T1-GE3 is suitable for use in a wide range of power electronic applications, including:

1. Motor control: The device's high voltage and fast switching speed make it well-suited for use in motor control applications, such as brushless DC motor control and stepper motor control.
2. Power management: The low on-state resistance and high drain current of the SI3585CDV-T1-GE3 make it ideal for use in power management applications, such as battery management systems and power supply control.
3. Power conversion: The device's high voltage and fast switching speed also make it suitable for use in power conversion applications, such as DC-DC converters and AC-DC converters.

Overall, the SI3585CDV-T1-GE3 is a versatile and high-performance MOSFET that can be used in a variety of power electronic applications. Its high voltage, fast switching speed, and low on-state resistance make it an excellent choice for applications that require high efficiency and performance.