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Responsible qualityTech Specifications
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 4.5 V
Product Status
Obsolete
Supplier Device Package
8-SOIC
Drain to Source Voltage (Vdss)
30 V
Power Dissipation-Max
1.6W (Ta)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
SI4404DY-T1-GE3 Description
Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SI4404DY-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SI4404DY-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SI4404DY-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.
FAQ
Is SI4404DY-T1-GE3 currently in stock?
Yes. SI4404DY-T1-GE3 currently shows 9585 unit(s) in stock.
What operating temperature range does SI4404DY-T1-GE3 support?
What voltage specification is listed for SI4404DY-T1-GE3?
Are there related or alternative parts for SI4404DY-T1-GE3?
What is the mounting type of SI4404DY-T1-GE3?



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