

Vishay / Siliconix
SI4511DY-T1-GE3
289-SI4511DY-T1-GE3
MOSFET N/P-CH 20V 7.2A 8-SOIC
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Responsible qualityTech Specifications
FET Feature
Logic Level Gate
Configuration
N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds
-
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Obsolete
Rds On (Max) @ Id Vgs
14.5mOhm @ 9.6A, 10V
SI4511DY-T1-GE3 Description
Cut Tape (CT) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The FET, MOSFET Arrays that the SI4511DY-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SI4511DY-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SI4511DY-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.
FAQ
What voltage specification is listed for SI4511DY-T1-GE3?
The listed voltage-related specification for SI4511DY-T1-GE3 is 20V.
What package or case is SI4511DY-T1-GE3 available in?
What is the mounting type of SI4511DY-T1-GE3?
Is SI4511DY-T1-GE3 currently in stock?
What is SI4511DY-T1-GE3?



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