

Vishay / Siliconix
SI7252DP-T1-GE3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
SI7252DP-T1-GE3 Description
The SI7252DP-T1-GE3 is a high-performance, dual N-channel MOSFET driver from Vishay Siliconix. It is designed to drive two N-channel MOSFETs in parallel for high current applications, such as motor control, power management, and DC-DC converters.
Description:
The SI7252DP-T1-GE3 is a monolithic integrated circuit in a 3-pin TO-263AB package. It features a high voltage input with a maximum voltage of 60V and a high current output capable of driving two N-channel MOSFETs with a combined current of up to 90A.
Features:
- Dual N-channel MOSFET driver
- High voltage input: up to 60V
- High current output: up to 90A (combined for two MOSFETs)
- Wide operating temperature range: -40°C to 125°C
- Short circuit protection
- Over-voltage protection
- Under-voltage lockout
- Thermal shutdown protection
- Small package size: 3-pin TO-263AB
Applications:
- Motor control
- Power management
- DC-DC converters
- Industrial control systems
- Robotics
- High current switching applications
In summary, the SI7252DP-T1-GE3 is a high-performance MOSFET driver designed for driving two N-channel MOSFETs in parallel for high current applications. It offers a wide operating temperature range, short circuit protection, over-voltage protection, under-voltage lockout, and thermal shutdown protection, making it suitable for a variety of applications in motor control, power management, and industrial control systems.



.png)








.png?x-oss-process=image/format,webp/resize,h_32)










