

Vishay / Siliconix
SIA850DJ-T1-GE3
278-SIA850DJ-T1-GE3
PDF Datasheet
MOSFET N-CH 190V 950MA PPAK
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Responsible qualityTech Specifications
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
90 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PowerPAK® SC-70-6 Dual
Drain to Source Voltage (Vdss)
190 V
Power Dissipation-Max
1.9W (Ta), 7W (Tc)
Package / Case
PowerPAK® SC-70-6 Dual
SIA850DJ-T1-GE3 Description
Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIA850DJ-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SIA850DJ-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIA850DJ-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.
FAQ
Are there related or alternative parts for SIA850DJ-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is SIA850DJ-T1-GE3 available in?
What is the mounting type of SIA850DJ-T1-GE3?
What voltage specification is listed for SIA850DJ-T1-GE3?
What operating temperature range does SIA850DJ-T1-GE3 support?



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