Vishay / Siliconix_SIA923EDJ-T1-GE3
original

Vishay / Siliconix
SIA923EDJ-T1-GE3

289-SIA923EDJ-T1-GE3
PDF Datasheet
MOSFET 2P-CH 20V 4.5A SC70-6
27 Weeks

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
Logic Level Gate
Configuration
2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds
-
Gate Charge (Qg) (Max) @ Vgs
25nC @ 8V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
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SIA923EDJ-T1-GE3 Description

The SIA923EDJ-T1-GE3 is a high voltage, high power MOSFET transistor manufactured by Vishay Siliconix. This device is designed for use in a variety of applications, including power electronics, motor control, and industrial control systems.

Description:

The SIA923EDJ-T1-GE3 is a N-channel enhancement mode MOSFET transistor. It is a high voltage, high power device that is capable of handling high current and voltage levels. The device is available in a TO-220AB package, which is a standard package for power MOSFETs.

Features:

  • N-channel, enhancement mode MOSFET transistor
  • High voltage, high power device
  • TO-220AB package
  • Suitable for use in power electronics, motor control, and industrial control systems

Applications:

The SIA923EDJ-T1-GE3 is suitable for use in a variety of applications, including:

  • Power electronics
  • Motor control
  • Industrial control systems
  • High voltage switching applications
  • DC-to-DC converters
  • Inverters

In summary, the SIA923EDJ-T1-GE3 is a high voltage, high power MOSFET transistor that is designed for use in power electronics, motor control, and industrial control systems. It offers high performance and reliability in a standard TO-220AB package.

FAQ

What operating temperature range does SIA923EDJ-T1-GE3 support?
SIA923EDJ-T1-GE3 has an operating temperature range of -55°C ~ 150°C (TJ).
What is the standard lead time for SIA923EDJ-T1-GE3?
What package or case is SIA923EDJ-T1-GE3 available in?
What is the mounting type of SIA923EDJ-T1-GE3?
What is SIA923EDJ-T1-GE3?
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