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Vishay / Siliconix
SIC464ED-T1-GE3
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Tech Specifications
SIC464ED-T1-GE3 Description
The SIC464ED-T1-GE3 is a high-power MOSFET from Vishay Siliconix. It is designed for use in high-power applications such as motor control, power supplies, and automotive systems.
Description:
The SIC464ED-T1-GE3 is a N-channel MOSFET with a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 42A. It has a low on-state resistance (RDS(ON)) of 55mΩ max, which allows for efficient power switching. The device also has a fast switching speed, with a typical gate charge (Qg) of 43nC.
Features:
- High-power MOSFET
- 100V drain-source voltage
- 42A continuous drain current
- Low on-state resistance (55mΩ max)
- Fast switching speed (43nC gate charge)
- Suitable for high-power applications
Applications:
The SIC464ED-T1-GE3 is suitable for a wide range of high-power applications, including:
- Motor control
- Power supplies
- Automotive systems
- Industrial control
- Renewable energy systems
- Battery management systems
Overall, the SIC464ED-T1-GE3 is a high-performance MOSFET that offers efficient power switching and fast switching speeds, making it ideal for use in a variety of high-power applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.71920 | $2.72 |
| 10+ | $2.03544 | $20.35 |
| 25+ | $1.86525 | $46.63 |
| 100+ | $1.67772 | $167.77 |
| 250+ | $1.58833 | $397.08 |
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