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SIC634CD-T1-GE3

The SIC634CD-T1-GE3 is a high voltage, high power MOSFET transistor manufactured by Vishay Siliconix. It is a N-channel enhancement mode device that is designed for use in a variety of high-power applications.

Description:

The SIC634CD-T1-GE3 is a surface-mount MOSFET transistor that is available in a TO-220AB package. It has a maximum drain-source voltage (V_DSS) of 1200V and a continuous drain current (I_D) of 9.2A. The device also has a low input capacitance, which allows for fast switching and high efficiency.

Features:

• N-channel, enhancement mode
• Surface-mount package
• High voltage, high power
• Maximum drain-source voltage (V_DSS) of 1200V
• Continuous drain current (I_D) of 9.2A
• Low input capacitance for fast switching and high efficiency
• Suitable for use in a wide range of applications

Applications:

The SIC634CD-T1-GE3 is suitable for use in a variety of high-power applications, including:

• Switch mode power supplies (SMPS)
• Motor control
• High voltage power conversion
• Industrial control and automation
• Renewable energy systems
• Automotive applications

The SIC634CD-T1-GE3 is a high-performance MOSFET transistor that offers high voltage and high power handling capabilities in a compact surface-mount package. Its low input capacitance makes it ideal for use in high-efficiency switching applications. The device is suitable for use in a wide range of industries, including industrial, automotive, and renewable energy.