Vishay / Siliconix_SIDR5802EP-T1-RE3
original

Vishay / Siliconix
SIDR5802EP-T1-RE3

278-SIDR5802EP-T1-RE3
PDF Datasheet
N-CHANNEL 80 V (D-S) 175C MOSFET
62 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3020 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Product Status
Active
Supplier Device Package
PowerPAK® SO-8DC
Drain to Source Voltage (Vdss)
80 V
Power Dissipation (Max)
7.5W (Ta), 150W (Tc)
Package / Case
PowerPAK® SO-8
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SIDR5802EP-T1-RE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIDR5802EP-T1-RE3 belongs to can be classified under the Discrete Semiconductors. SIDR5802EP-T1-RE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIDR5802EP-T1-RE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for SIDR5802EP-T1-RE3?
The listed voltage-related specification for SIDR5802EP-T1-RE3 is 80 V.
What operating temperature range does SIDR5802EP-T1-RE3 support?
What package or case is SIDR5802EP-T1-RE3 available in?
What is SIDR5802EP-T1-RE3?
What is the standard lead time for SIDR5802EP-T1-RE3?
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