Vishay / Siliconix
SIHB120N60E-T1-GE3

278-SIHB120N60E-T1-GE3
PDF Datasheet
N-CHANNEL 600V
21 Weeks

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
-
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1562 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
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SIHB120N60E-T1-GE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIHB120N60E-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SIHB120N60E-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIHB120N60E-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is SIHB120N60E-T1-GE3?
SIHB120N60E-T1-GE3 is a Single FETs, MOSFETs from Vishay / Siliconix. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for SIHB120N60E-T1-GE3?
Are there related or alternative parts for SIHB120N60E-T1-GE3?
Is SIHB120N60E-T1-GE3 currently in stock?
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