Vishay / Siliconix

SIHB24N65EFT1-GE3  

Single FETs, MOSFETs

The SIHB24N65EFT1-GE3 is a high voltage, high frequency, N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor drives, power supplies, and renewable energy systems.

Description:

The SIHB24N65EFT1-GE3 is a surface-mount MOSFET transistor with a drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 24A. It has a low on-state resistance (Rds(on)) of 45mΩ maximum, which allows for efficient power transfer with minimal power loss. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a low input capacitance (Ciss) of 810pF.

Features:

• High voltage and current ratings: Vds of 650V and Id of 24A
• Low on-state resistance: Rds(on) of 45mΩ maximum
• Fast switching speed: Qg of 44nC and Ciss of 810pF
• Surface-mount package: suitable for use in compact, high-density applications
• AEC-Q101 qualified: suitable for use in automotive applications

Applications:

• Motor drives: brushless DC motor control, AC motor control
• Power supplies: offline switch mode power supplies, synchronous rectifiers
• Renewable energy systems: solar panel power conditioning, wind turbine converters
• Automotive applications: electric vehicle charging systems, inverter drives

The SIHB24N65EFT1-GE3 is a high performance MOSFET transistor that offers high efficiency and fast switching speeds for a wide range of power electronic applications. Its low on-state resistance and high voltage and current ratings make it an ideal choice for applications that require high power density and low power loss. Its surface-mount package and AEC-Q101 qualification also make it suitable for use in compact, high-density applications and automotive systems.

SIHB24N65EFT1-GE3 Documents

Download datasheets and manufacturer documentation for SIHB24N65EFT1-GE3

Datasheets :

SIHB24N65EF      

HTML Datasheet :

SIHB24N65EF