Vishay / Siliconix

SIHG20N50C-E3  

Single FETs, MOSFETs

The SIHG20N50C-E3 is a high voltage N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of applications, including power switching, motor control, and power management.

Description:

The SIHG20N50C-E3 is a high voltage N-channel MOSFET transistor that features a drain-source voltage (Vds) of 500V, a continuous drain current (Id) of 20A, and a gate-source voltage (Vgs) of ±20V. It is available in a TO-220AB package, which is suitable for use in a variety of power electronics applications.

Features:

• High voltage N-channel MOSFET transistor
• Drain-source voltage (Vds) of 500V
• Continuous drain current (Id) of 20A
• Gate-source voltage (Vgs) of ±20V
• TO-220AB package

Applications:

• Power switching
• Motor control
• Power management
• Inverters
• DC-DC converters
• Industrial control systems
• Renewable energy systems

The SIHG20N50C-E3 is a high performance MOSFET transistor that is capable of handling high voltage and current levels. It is suitable for use in a wide range of power electronics applications, including power switching, motor control, and power management. Its high voltage and current handling capabilities make it an ideal choice for use in demanding applications that require high efficiency and reliability.

SIHG20N50C-E3 Documents

Download datasheets and manufacturer documentation for SIHG20N50C-E3

PCN Assembly/Origin :

Mosfet Mfg Add 28/Sep/2020      

Datasheets :

SIHG20N50C      

PCN Packaging :

Packing Tube Design 19/Sep/2019      

HTML Datasheet :

SIHG20N50C