Vishay / Siliconix_SIHK185N60E-T1-GE3
original

Vishay / Siliconix
SIHK185N60E-T1-GE3

278-SIHK185N60E-T1-GE3
PDF Datasheet
E SERIES POWER MOSFET POWERPAK 1
21 Weeks

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ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1085 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Product Status
Active
Supplier Device Package
PowerPAK®10 x 12
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
114W (Tc)
Package / Case
8-PowerBSFN
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SIHK185N60E-T1-GE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIHK185N60E-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SIHK185N60E-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIHK185N60E-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for SIHK185N60E-T1-GE3?
The listed voltage-related specification for SIHK185N60E-T1-GE3 is 600 V.
Are there related or alternative parts for SIHK185N60E-T1-GE3?
What is SIHK185N60E-T1-GE3?
What operating temperature range does SIHK185N60E-T1-GE3 support?
Is SIHK185N60E-T1-GE3 currently in stock?
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