Vishay / Siliconix_SIR106DP-T1-RE3

Vishay / Siliconix
SIR106DP-T1-RE3  
Single FETs, MOSFETs

Vishay / Siliconix
SIR106DP-T1-RE3
278-SIR106DP-T1-RE3
Ersa
Vishay / Siliconix-SIR106DP-T1-RE3-datasheets-4668021.pdf
MOSFET N-CH 100V 16.1A PPAK
In Stock : 1521

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SIR106DP-T1-RE3 Description

The SIR106DP-T1-RE3 is a high-performance, high-power Schottky barrier rectifier from Vishay / Siliconix. It is designed to handle high current and high voltage applications, making it ideal for use in a variety of industrial and power electronics systems.

Description:

The SIR106DP-T1-RE3 is a surface-mount rectifier with a maximum repetitive reverse voltage (VRRM) of 100V and a maximum average forward current (IF) of 60A. It is housed in a DPAK package, which is designed for high power density and thermal performance.

Features:

  • High current and high voltage capabilities
  • Low forward voltage drop
  • High efficiency and reliability
  • Compact and robust DPAK package
  • Suitable for use in high temperature environments

Applications:

The SIR106DP-T1-RE3 is commonly used in a variety of power electronics applications, including:

  1. Power supplies
  2. Motor control circuits
  3. Automotive systems
  4. Industrial control systems
  5. Renewable energy systems
  6. Switch mode power supplies (SMPS)
  7. Inverters

Overall, the SIR106DP-T1-RE3 is a high-performance rectifier that is well-suited for use in demanding power electronics applications. Its high current and voltage capabilities, combined with its compact and robust package, make it a popular choice for engineers and designers working on a wide range of projects.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

SIR106DP-T1-RE3 Documents

Download datasheets and manufacturer documentation for SIR106DP-T1-RE3

Ersa New solder paste 26/May/2023      
Ersa SIR106DP      
Ersa SIR106DP      
Ersa Mult Dev 07/Jun/2023      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service