Vishay / Siliconix_SIR178DP-T1-RE3

Vishay / Siliconix
SIR178DP-T1-RE3  
Single FETs, MOSFETs

Vishay / Siliconix
SIR178DP-T1-RE3
278-SIR178DP-T1-RE3
Ersa
Vishay / Siliconix-SIR178DP-T1-RE3-datasheets-4366637.pdf
MOSFET N-CH 20V 100A/430A PPAK
In Stock : 10176

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ISO9001
Quality Policy
ISO45001
ISO14001

SIR178DP-T1-RE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SIR178DP-T1-RE3 belongs to can be classified under the Discrete Semiconductors. SIR178DP-T1-RE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIR178DP-T1-RE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

SIR178DP-T1-RE3 Documents

Download datasheets and manufacturer documentation for SIR178DP-T1-RE3

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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