Vishay / Siliconix_SIR826LDP-T1-RE3

Vishay / Siliconix
SIR826LDP-T1-RE3  
Single FETs, MOSFETs

Vishay / Siliconix
SIR826LDP-T1-RE3
278-SIR826LDP-T1-RE3
Ersa
Vishay / Siliconix-SIR826LDP-T1-RE3-datasheets-8886340.pdf
MOSFET N-CH 80V 21.3A/86A PPAK
In Stock : 91016

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    SIR826LDP-T1-RE3 Description

    The SIR826LDP-T1-RE3 is a high-power Schottky barrier rectifier (SBR) manufactured by Vishay Siliconix. It is designed for use in high-power applications, such as power supplies, motor control, and renewable energy systems.

    Description:

    The SIR826LDP-T1-RE3 is a surface-mount rectifier with a maximum repetitive reverse voltage (VRRM) of 100V and a maximum average forward rectified current (IF) of 80A. It has a low forward voltage drop (VF) and a high switching speed, making it suitable for high-efficiency power conversion applications.

    Features:

    • High-power Schottky barrier rectifier
    • Surface-mount package
    • Maximum repetitive reverse voltage (VRRM) of 100V
    • Maximum average forward rectified current (IF) of 80A
    • Low forward voltage drop (VF)
    • High switching speed
    • High efficiency

    Applications:

    • Power supplies
    • Motor control
    • Renewable energy systems
    • High-power DC-DC converters
    • Automotive applications
    • Industrial control systems

    The SIR826LDP-T1-RE3 is a high-performance rectifier that offers excellent efficiency and reliability in high-power applications. Its low forward voltage drop and high switching speed make it an ideal choice for power conversion applications where efficiency and performance are critical.

    Tech Specifications

    FET Type
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Product Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Power Dissipation (Max)
    Package / Case
    Technology
    Mfr
    Vgs (Max)
    RoHS Status
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    FET Feature
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Series
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Base Product Number
    Unit Weight
    Configuration
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    SIR826LDP-T1-RE3 Documents

    Download datasheets and manufacturer documentation for SIR826LDP-T1-RE3

    Ersa New solder paste 26/May/2023      
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    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service