

Vishay / Siliconix
SIZ998BDT-T1-GE3
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SIZ998BDT-T1-GE3 Description
The SIZ998BDT-T1-GE3 is a high-power MOSFET transistor manufactured by Vishay Siliconix. This device is designed for use in a variety of power electronic applications, including motor drives, power supplies, and renewable energy systems.
Description:
The SIZ998BDT-T1-GE3 is a N-channel MOSFET transistor that features a high voltage rating of 1000V and a continuous drain current of 90A. It is housed in a TO-220 package, which is suitable for use in a range of applications.
Features:
- High voltage rating of 1000V
- Continuous drain current of 90A
- N-channel MOSFET design
- TO-220 package
- Low on-state resistance for improved efficiency
- High switching speeds for fast transient response
- Robust protection features for reliable operation
Applications:
The SIZ998BDT-T1-GE3 is suitable for use in a variety of power electronic applications, including:
- Motor drives for industrial and automotive applications
- Power supplies for computers, servers, and telecommunications equipment
- Renewable energy systems, such as solar panel inverters and wind turbine converters
- Battery management systems for electric vehicles and energy storage systems
- High-power switching applications in industrial automation and control systems
Overall, the SIZ998BDT-T1-GE3 is a high-performance MOSFET transistor that offers excellent electrical characteristics and robust protection features, making it an ideal choice for a wide range of power electronic applications.



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