Vishay / Siliconix_SIZF906DT-T1-GE3

Vishay / Siliconix
SIZF906DT-T1-GE3  
FET, MOSFET Arrays

Vishay / Siliconix
SIZF906DT-T1-GE3
289-SIZF906DT-T1-GE3
Ersa
Vishay / Siliconix-SIZF906DT-T1-GE3-datasheets-7161627.pdf
MOSFET 2N-CH 30V 60A 8POWERPAIR
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    SIZF906DT-T1-GE3 Description

    Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The FET, MOSFET Arrays that the SIZF906DT-T1-GE3 belongs to can be classified under the Discrete Semiconductors. SIZF906DT-T1-GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SIZF906DT-T1-GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

    Tech Specifications

    Operating Temperature
    FET Feature
    Configuration
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    ECCN
    Mounting Type
    Product Status
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Series
    Package / Case
    Technology
    Power - Max
    REACH Status
    Mfr
    Current - Continuous Drain (Id) @ 25°C
    HTSUS
    Package
    RoHS Status
    Base Product Number
    Moisture Sensitivity Level (MSL)
    Unit Weight
    Id - Continuous Drain Current
    Channel Mode
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    SIZF906DT-T1-GE3 Documents

    Download datasheets and manufacturer documentation for SIZF906DT-T1-GE3

    Ersa Mult Dev Wafer Process 09/Jan/2024      
    Ersa SiZF906DT      
    Ersa SiZF906DT      

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