Vishay / Siliconix

SQA401EEJ-T1_GE3  

Single FETs, MOSFETs

The SQA401EEJ-T1_GE3 is a high voltage, high power MOSFET from Vishay Siliconix. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The SQA401EEJ-T1_GE3 is an N-channel MOSFET with a drain-source voltage (Vds) of -400V and a continuous drain current (Id) of 6.5A. It is available in a TO-220 package.

Features:

• High voltage, high power MOSFET
• Drain-source voltage (Vds) of -400V
• Continuous drain current (Id) of 6.5A
• N-channel, logic level gate
• Low on-state resistance (Rds(on))
• Fast switching times
• Available in TO-220 package

Applications:

• High voltage switching
• Power management
• Motor control
• DC-DC converters
• Class D audio amplifiers
• Industrial control
• Renewable energy systems

The SQA401EEJ-T1_GE3 is a high performance MOSFET that offers high voltage and high power capabilities in a compact package. Its fast switching times and low on-state resistance make it well suited for a variety of applications, including power management and high voltage switching.

SQA401EEJ-T1_GE3 Documents

Download datasheets and manufacturer documentation for SQA401EEJ-T1_GE3

Datasheets :

SQA401EEJ      

HTML Datasheet :

SQA401EEJ