Vishay / Siliconix Tariff Inquiry

SQJ138EP-T1_GE3

The SQJ138EP-T1_GE3 is a high-power superjunction MOSFET manufactured by Vishay Siliconix. It is designed for use in high-power applications, such as power supplies, motor drives, and renewable energy systems.

Description:

The SQJ138EP-T1_GE3 is a N-channel MOSFET with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 39A. It features a low on-state resistance (RDS(on)) of 5.5mΩ, which helps to minimize power dissipation and improve efficiency in high-power applications.

Features:

• Superjunction technology for high efficiency and low on-state resistance
• High input impedance and fast switching speed
• Low gate charge for reduced switching losses
• Avalanche energy rating of 175J
• Built-in bootstrap diode for improved performance in high-voltage applications
• RoHS compliant

Applications:

The SQJ138EP-T1_GE3 is suitable for a wide range of high-power applications, including:

• Power supplies
• Motor drives
• Renewable energy systems (solar, wind)
• Electric vehicle charging stations
• Industrial control systems
• High-power inverters

Overall, the SQJ138EP-T1_GE3 is a high-performance MOSFET that offers excellent efficiency and reliability in demanding high-power applications. Its superjunction technology and low on-state resistance make it an ideal choice for applications that require high efficiency and low power dissipation.