Vishay / Siliconix_SQJ942EP-T1_GE3

Vishay / Siliconix
SQJ942EP-T1_GE3  
FET, MOSFET Arrays

Vishay / Siliconix
SQJ942EP-T1_GE3
289-SQJ942EP-T1_GE3
Ersa
Vishay / Siliconix-SQJ942EP-T1_GE3-datasheets-9750088.pdf
MOSFET 2N-CH 40V 15A PPAK SO8
In Stock : 1794

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ISO9001
Quality Policy
ISO45001
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SQJ942EP-T1_GE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The FET, MOSFET Arrays that the SQJ942EP-T1_GE3 belongs to can be classified under the Discrete Semiconductors. SQJ942EP-T1_GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SQJ942EP-T1_GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

Tech Specifications

Operating Temperature
FET Feature
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
ECCN
Grade
Mounting Type
Product Status
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Series
Qualification
Package / Case
Technology
Power - Max
Mfr
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
Base Product Number
Moisture Sensitivity Level (MSL)
Unit Weight
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

SQJ942EP-T1_GE3 Documents

Download datasheets and manufacturer documentation for SQJ942EP-T1_GE3

Ersa SQJ942EP      
Ersa SQJ942EP      

Shopping Guide

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