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SUM80090E-GE3

The SUM80090E-GE3 is a high voltage, high current MOSFET from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.

Description:

The SUM80090E-GE3 is a N-channel MOSFET with a drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 80A. It is available in a TO-247AC package, which is suitable for high power applications.

Features:

• High voltage and current ratings: The SUM80090E-GE3 has a drain-source voltage (Vds) of 900V and a continuous drain current (Id) of 80A, making it suitable for high power applications.
• Low on-state resistance (Rds(on)): The SUM80090E-GE3 has a low on-state resistance (Rds(on)) of 4.5 mΩ max, which helps to minimize power losses and improve efficiency.
• High switching speed: The SUM80090E-GE3 has a fast switching speed, with a typical gate charge (Qg) of 62 nC and a gate-source threshold voltage (Vgs(th)) of 3.0V min.
• Built-in protection features: The SUM80090E-GE3 includes built-in protection features such as over-temperature protection and avalanche energy handling capability.

Applications:

The SUM80090E-GE3 is suitable for use in a variety of power electronic applications, including:

• Motor control: The high voltage and current ratings, along with the fast switching speed, make the SUM80090E-GE3 well-suited for use in motor control applications, such as in industrial automation and robotics.
• Power supplies: The SUM80090E-GE3 can be used in power supply applications, such as in uninterruptible power supplies (UPS) and power factor correction (PFC) circuits.
• Renewable energy systems: The high voltage and current ratings, along with the built-in protection features, make the SUM80090E-GE3 suitable for use in renewable energy systems, such as solar power inverters and wind turbine converters.

Overall, the SUM80090E-GE3 is a high performance MOSFET that offers high voltage and current ratings, low on-state resistance, and fast switching speed, making it suitable for a wide range of power electronic applications.