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SIR158DP-T1-GE3
278-SIR158DP-T1-GE3
PDF Datasheet
30V 40A N-CH MOSFET, 1.8mR Rds On, PPAK SO-8
8 weeks
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Tech Specifications
Continuous Drain Current (ID)
40A
Drain to Source Resistance
1.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
1.8MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
4.98nF
SIR158DP-T1-GE3 Description
30V 40A N-CH MOSFET, 1.8mR Rds On, PPAK SO-8
FAQ
Does SIR158DP-T1-GE3 have quantity-based pricing?
Yes. SIR158DP-T1-GE3 currently has 3 pricing tier(s), starting from 3000 units.
What package or case is SIR158DP-T1-GE3 available in?
What voltage specification is listed for SIR158DP-T1-GE3?
What is the standard lead time for SIR158DP-T1-GE3?
What operating temperature range does SIR158DP-T1-GE3 support?
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