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Vishay
SIR402DP-T1-E3
285-SIR402DP-T1-E3
VISHAY SIR402DP-T1-E3 MOSFET Transistor, N Channel, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
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Tech Specifications
Continuous Drain Current (ID)
35A
Drain to Source Voltage (Vdss)
30V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
4.2W
Nominal Vgs
1.15V
Packaging
Cut Tape
Power Dissipation
4.2W
SIR402DP-T1-E3 Description
VISHAY SIR402DP-T1-E3 MOSFET Transistor, N Channel, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
FAQ
What is SIR402DP-T1-E3?
SIR402DP-T1-E3 is a RF FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does SIR402DP-T1-E3 support?
What voltage specification is listed for SIR402DP-T1-E3?
Is SIR402DP-T1-E3 currently in stock?
Are there related or alternative parts for SIR402DP-T1-E3?
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