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SIR688DP-T1-GE3
278-SIR688DP-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 60A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
27 weeks
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Tech Specifications
Package/Case
SO
Continuous Drain Current (ID)
60A
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
60V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.105nF
Max Operating Temperature
150°C
SIR688DP-T1-GE3 Description
Power Field-Effect Transistor, 60A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8
FAQ
Are there related or alternative parts for SIR688DP-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What voltage specification is listed for SIR688DP-T1-GE3?
What is the standard lead time for SIR688DP-T1-GE3?
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