German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SIR800DP-T1-GE3
278-SIR800DP-T1-GE3
PDF Datasheet
N-CH MOSFET 20V 50A 1.9mR PPAK SO-8
16 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Continuous Drain Current (ID)
50A
Drain to Source Resistance
1.9mR
Drain to Source Voltage (Vdss)
20V
Fall Time
27ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
5.125nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SIR800DP-T1-GE3 Description
N-CH MOSFET 20V 50A 1.9mR PPAK SO-8
FAQ
What is the mounting type of SIR800DP-T1-GE3?
SIR800DP-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
What voltage specification is listed for SIR800DP-T1-GE3?
Does SIR800DP-T1-GE3 have quantity-based pricing?
What operating temperature range does SIR800DP-T1-GE3 support?
What is SIR800DP-T1-GE3?
Availability
(In Stock :
70 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.76685 | $2.77 |
| 10+ | $2.71200 | $27.12 |
| 30+ | $2.67600 | $80.28 |
ADD TO CART
QUICK ORDER
Unit Price $2.76685
Subtotal $2.77
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
