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SIR882DP-T1-GE3
278-SIR882DP-T1-GE3
PDF Datasheet
MOSFET N-CH 100V 60A PPAK SO-8
27 weeks
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Tech Specifications
Continuous Drain Current (ID)
60A
Drain to Source Resistance
8.7mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.93nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SIR882DP-T1-GE3 Description
MOSFET N-CH 100V 60A PPAK SO-8
FAQ
What is the mounting type of SIR882DP-T1-GE3?
SIR882DP-T1-GE3 uses a Surface Mount mounting style based on the listed product specifications.
What operating temperature range does SIR882DP-T1-GE3 support?
What voltage specification is listed for SIR882DP-T1-GE3?
What package or case is SIR882DP-T1-GE3 available in?
Are there related or alternative parts for SIR882DP-T1-GE3?
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