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SIS413DN-T1-GE3
278-SIS413DN-T1-GE3
PDF Datasheet
P-Channel MOSFET, 30V, -18A, 9.4mR, Surface Mount
8 weeks
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Tech Specifications
Continuous Drain Current (ID)
-18A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
9.4mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.28nF
Max Operating Temperature
150°C
SIS413DN-T1-GE3 Description
P-Channel MOSFET, 30V, -18A, 9.4mR, Surface Mount
FAQ
Are there related or alternative parts for SIS413DN-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Does SIS413DN-T1-GE3 have quantity-based pricing?
What is SIS413DN-T1-GE3?
What is the standard lead time for SIS413DN-T1-GE3?
What is the mounting type of SIS413DN-T1-GE3?
Availability
(In Stock :
9480 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.57772 | $5.78 |
| 30+ | $0.52115 | $15.63 |
| 100+ | $0.46457 | $46.46 |
| 500+ | $0.39600 | $198.00 |
| 1000+ | $0.37715 | $377.15 |
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