Vishay
SIS427EDN-T1-GE3
278-SIS427EDN-T1-GE3
PDF Datasheet
P-CH MOSFET -30V -50A 10.6mR Surface Mount
18 weeks
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Tech Specifications
Continuous Drain Current (ID)
-50A
Drain to Source Resistance
17.7mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.93nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
SIS427EDN-T1-GE3 Description
P-CH MOSFET -30V -50A 10.6mR Surface Mount
FAQ
What voltage specification is listed for SIS427EDN-T1-GE3?
The listed voltage-related specification for SIS427EDN-T1-GE3 is -30V.
Are there related or alternative parts for SIS427EDN-T1-GE3?
What is the mounting type of SIS427EDN-T1-GE3?
What is the standard lead time for SIS427EDN-T1-GE3?
What package or case is SIS427EDN-T1-GE3 available in?
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