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Tech Specifications
Continuous Drain Current (ID)
35A
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.065nF
Max Operating Temperature
150°C
SIS444DN-T1-GE3 Description
MOSFET N-Channel 30V
FAQ
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