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SIS454DN-T1-GE3
278-SIS454DN-T1-GE3
PDF Datasheet
MOSFET N-CH 20V 35A 1212-8 PPAK
16 weeks
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Tech Specifications
Continuous Drain Current (ID)
35A
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.9nF
Lead Free
Lead Free
Max Operating Temperature
150°C
SIS454DN-T1-GE3 Description
MOSFET N-CH 20V 35A 1212-8 PPAK
FAQ
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SIS454DN-T1-GE3 is currently available on an inquiry basis. Please contact us for the latest stock information.
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