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SIS862DN-T1-GE3
278-SIS862DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8
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Tech Specifications
Continuous Drain Current (ID)
40A
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
60V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.32nF
Lead Free
Lead Free
Max Operating Temperature
150°C
SIS862DN-T1-GE3 Description
Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8
FAQ
Are there related or alternative parts for SIS862DN-T1-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is SIS862DN-T1-GE3 available in?
What voltage specification is listed for SIS862DN-T1-GE3?
Does SIS862DN-T1-GE3 have quantity-based pricing?
What is the mounting type of SIS862DN-T1-GE3?
Availability
(In Stock :
48 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.52743 | $1.53 |
| 10+ | $1.26172 | $12.62 |
| 30+ | $1.11600 | $33.48 |
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Unit Price $1.52743
Subtotal $1.53
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